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NEET-UG Biology

Semiconductors; intrinsic and extrinsic; the p-n junction — practice questions

96 questions in the bank on this idea. Below are 10 of them, exactly as they appear in a test.

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  1. Question 1 · difficulty L1 · recall

    A semiconductor has electrical conductivity that is typically

    • A. between that of conductors and insulators
    • B. always greater than copper
    • C. exactly zero at all temperatures
    • D. independent of temperature and doping
  2. Question 2 · difficulty L1 · understanding

    In an intrinsic semiconductor, the number of free electrons is

    • A. much greater than holes
    • B. equal to the number of holes
    • C. much smaller than holes
    • D. always zero
  3. Question 3 · difficulty L2 · understanding

    Doping silicon with a pentavalent impurity produces

    • A. a p-type semiconductor
    • B. an intrinsic semiconductor
    • C. an n-type semiconductor
    • D. a perfect insulator
  4. Question 4 · difficulty L2 · application

    Doping silicon with a trivalent impurity produces

    • A. an n-type semiconductor
    • B. a metal with no holes
    • C. an intrinsic crystal
    • D. a p-type semiconductor
  5. Question 5 · difficulty L2 · understanding

    In a semiconductor pp-n diode, the doping concentrations on pp-side and nn-side are 101510^{15} atoms /cm3/ \mathrm{cm}^3 and 101810^{18} atoms /cm3/ \mathrm{cm}^3, respectively. Which one of the following statements is true?

    • A. Widths of depletion region on either side of the interface are equal
    • B. The depletion region width is more on p -side compared to that in n -side
    • C. The depletion region width is more on nn-side compared to that in pp-side
    • D. No depletion region forms because of unequal doping concentrations on p and n -sides
  6. Question 6 · difficulty L2 · understanding

    Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R\mathbf{R} Assertion A : A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically. Reason R : Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage. choose the correct answer from the options given below

    • A. Both A\mathbf{A} and R\mathbf{R} are true and R\mathbf{R} is the correct explanation of A\mathbf{A}
    • B. Both A\mathbf{A} and R\mathbf{R} are true but R\mathbf{R} is NOT the correct explanation of A\mathbf{A}
    • C. A is true but R\mathbf{R} is false
    • D. A is false but R\mathbf{R} is true
  7. Question 7 · difficulty L2 · understanding

    Consider a circuit consisting of a capacitor (20μ F)(20 \mu \mathrm{~F}), resistor (100Ω)(100 \Omega) and two identical diodes as shown in figure. The resistance of diode under forward biasing condition is 10Ω10 \Omega. The time constant of the circuit is α×103 s\alpha \times 10^{-3} \mathrm{~s}. The value of α\alpha is ____\_\_\_\_

    • A. 2.2
    • B. 2.0
    • C. 2.1
    • D. 2.4
  8. Question 8 · difficulty L2 · understanding

    The output voltage in the following circuit is (Consider ideal diode case)

    • A. 0 V
    • B. +5 V
    • C. −5 V
    • D. 10 V
  9. Question 9 · difficulty L2 · understanding

    What is the current through the battery in the circuit shown below?

    • A. 1.5 A
    • B. 0.25 A
    • C. 1.0 A
    • D. 0.5 A
  10. Question 10 · difficulty L2 · understanding

    Which of the following circuits represents a forward biased diode? Choose the correct answer from the options given below:

    • A. (C) and (E) only
    • B. (A) and (D) only
    • C. (B), (D) and (E) only
    • D. (B), (C) and (E) only

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